| PART |
Description |
Maker |
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
| AOD404 MCD404 |
N-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AO4485 |
P-Channel 40-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MCD410 AOD410 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC4418 AO4418 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC4408 |
N-Channel 30-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDG315N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| MC8810 |
Dual N-Channel Logical Level MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
